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Pb Free Plating Product
ISSUED DATE :2005/03/10 REVISED DATE :
GS1333
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-20V 800m -550mA
Description
The GS1333 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.
*Simple Gate Drive *Small Package Outline *Fast Switching Speed
Features
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a
Ratings -20 f 12 -550 -440 2.5 0.35 0.003 -55 ~ +150 Ratings 360
Unit V V mA mA A W W/
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max. Unit /W
1/4
ISSUED DATE :2005/03/10 REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min. -20 -0.5 Typ. 0.01 1 1.7 0.3 0.4 5 8 10 2 66 25 20 Max. -1.2 D 100 -1 -10 600 800 1000 2.7 105.6 pF ns nC mL Unit V V/ : V S nA uA uA Test Conditions VGS=0, ID=-250uA Reference to 25 : , ID=-1mA VDS=VGS, ID=-250uA VDS=-5V, ID=-550mA 12V VGS= D VDS=-20V, VGS=0 VDS=-16V, VGS=0 VGS=-10V, ID=-550mA VGS=-4.5V, ID=-500mA VGS=-2.5V, ID=-300mA ID=-500mA VDS=-16V VGS=-4.5V VDS=-10V ID=-500mA VGS=-5V RG=3.3 L RD=20 L VGS=0V VDS=-10V f=1.0MHz
Symbol BVDSS
BVDSS / Tj
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : )
VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance
RDS(ON)
-
Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
-
Source-Drain Diode
Parameter Forward On Voltage
2
Symbol VSD
Min. -
Typ. -
Max. -1.2
Unit V
Test Conditions IS=-300mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec.
2/4
ISSUED DATE :2005/03/10 REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristics of Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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ISSUED DATE :2005/03/10 REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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